${\mathrm{ThCr}}_2{\mathrm{Si}}_2$-type intermetallics are layered conductors in which crystallographic anisotropy and multiband electronic states often give rise to characteristic magnetotransport phenomena. Here we report the molecular-beam epitaxy growth of ${\mathrm{LaAg}}_2{\mathrm{Ge}}_2$ thin films on MgO(001) and their magnetotransport properties. Hall measurements are well described by an effective two-carrier model with a high-mobility minority electron coexisting with a low-mobility majority hole. The observed positive magnetoresistance of 22.5% at 9 T exceeds the prediction of the isotropic two-band Drude model by more than an order of magnitude, indicating an anisotropic multisheet Fermi-surface origin. Consistently, angle-dependent magnetoresistance exhibits a dominant twofold anisotropy and additional reproducible dip/peak features at characteristic tilt angles that are nearly independent of field and temperature. These results extend our understanding of the anisotropic electronic transport in thin-film germanides within the ${\mathrm{ThCr}}_2{\mathrm{Si}}_2$ family.

Close

PrevNext

View figure in article

• Fermi surface
• Transition metals
• Molecular beam epitaxy
• Resistivity measurements