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Optimization of the growth of Sb2Te3 by MBE using thermally cracked Sb

Craig S. Knox1,2, Ahmet Yagmur1, Joel J. Burton1, Zabeada Aslam3, Philippa M. Shepley1, John Harrington3, Edmund H. Linfield2, Joshua R. Freeman2, and Satoshi Sasaki1

Phys. Rev. Materials 9, L111202 – Published 19 November, 2025

DOI: https://doi.org/10.1103/69xs-pvg1

Abstract

We have performed a materials investigation into the properties of antimony telluride films, grown by molecular beam epitaxy (MBE) as the temperature of an antimony cracking zone was varied. Through x-ray diffraction, magnetotransport studies, and examination using transmission electron microscopy, we find that as the cracker temperature is increased, the formation of defects is suppressed, due to the higher surface mobilities of the smaller antimony molecular species. This work highlights the importance of using a cracker cell and its optimization for the growth of high quality MBE grown films of Sb2Te3.

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