High power consumption, leakage currents, and fatigue in conventional electrical switches motivate the development of alternative switching paradigms for low-power and high-contrast signal control. In this study, a twisted bilayer SnTe switching architecture based on interlayer-twist-induced polarization switching is proposed. Introducing a finite twist disrupts the intrinsic symmetry of few-layer α-SnTe, generating an out-of-plane polarization and enabling a large-contrast switching response. Near a twist angle of $27.8^{\circ }$, with a gradual rotation of $0.{323}^{\circ }$, the polarization undergoes a pronounced evolution from a virtually negligible value to a maximum of $3.26\times {10}^{-11}\mathrm{C}/\mathrm{m}$, with the polarization differing by $3.24\times {10}^{-11}\mathrm{C}/\mathrm{m}$ between the two stable states. The remarkable polarization response induced by the subdegree interlayer twist establishes a viable strategy for designing low-power logic devices and multifunctional quantum electronic systems at the nanoscale.

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• Electronic structure of atoms & molecules
• Ferroelectricity
• Bilayer films
• Polarization