Nearly all ultrawide-bandgap oxides are affected by hole localization that limits $p$-type conductivity and thus potential applications for these materials. Highly localized holes, also known as hole polarons, are trapped in the vicinity of acceptor dopants, giving rise to large ionization energies and severely constraining free hole concentrations. Though this hole-trapping behavior affects wurtzite zinc oxide, rocksalt zinc oxide has been recently found to be resistant to the formation of hole polarons. Moreover, $p$-type doping using lithium acceptors was predicted to be achievable. While rocksalt zinc oxide is metastable and has a band gap near $\sim 3\mathrm{eV}$, here it is found that zinc magnesium oxide (${\mathrm{Zn}}_x{\mathrm{Mg}}_{1-x}\mathrm{O}$) alloys remain $p$-type dopable within the stable rocksalt crystal structure, in addition to exhibiting band gaps in excess of 4 eV. As in rocksalt zinc oxide, alkali acceptors are shallow in zinc magnesium oxide and do not appear to be affected by donor compensation. These results indicate that alkali-doped ${\mathrm{Zn}}_x{\mathrm{Mg}}_{1-x}\mathrm{O}$ alloys are a promising system for achieving a $p$-type dopable ultrawide-bandgap oxide.

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• Doping effects
• Oxides
• Semiconductor compounds
• Density functional theory