Influence of spacer layers on spin transport efficiency in heterostructures
Phys. Rev. Materials 10, 014415 – Published 30 January, 2026
DOI: https://doi.org/10.1103/4448-xznx
Abstract
Epitaxially grown multilayers, , with a thickness of the Cu spacer layers from 0 to 5 nm, were prepared on (100)-oriented MgO substrates. The multilayer exhibited a pronounced exchange bias field in the absence of a Cu spacer, which became minimal with the introduction of a finite Cu spacer. We measured spin-torque ferromagnetic resonance to estimate the spin-Hall angle () in the multilayers, emphasizing the role of the Cu spacer layer in the spin current transport across the interface. We found that both and the effective Gilbert damping parameter decrease significantly upon the insertion of Cu, suggesting that the spin-orbit torque (SOT) primarily originates from interfaces. A correlation between SOT and exchange bias with the Cu spacer layer indicates the significance of interfacial contributions. These experimental results demonstrate the critical importance of interfacial engineering in antiferromagnetic-based spintronics, revealing an alternative mechanism for generating spin torque in magnetic heterostructures that is essential for controlling magnetization dynamics in energy-efficient spintronics applications.