Electric bubbles are sub-10-nm spherical ferroelectric domains promising intriguing functional properties suitable for the next-generation solid-state electronic devices. However, the understanding of their dynamic conductivities, a paramount factor in their circuit integration, remains limited. Here we investigate conduction properties of ferroelectric bubbles using a combination of scanning probe microscopy and first-principles-based simulations. Our experiments reveal that the bubbles exhibit rectifying current-voltage characteristics with ultrahigh direct current densities, attributed to tunneling. Under external electric field, conductivity is maintained or enhanced as long as the original bubble configuration remains stable. On the other hand, when the dipolar configuration is fully disrupted by mechanical force, the conductivity of mechanically switched downward domains decreases by 50%. Our simulations reveal the role of inhomogeneous depolarizing fields and screening conditions which allows for dynamical tuning of the tunneling transport. This ability to control conductivity in ferroelectric bubbles through external stimuli opens new possibilities for their application in future electronic and functional devices.

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• Ferroelectric domains
• Topological defects
• First-principles calculations
• Scanning probe microscopy