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Pinning of antiferromagnetic domain walls and domain structure in ultrathin La0.45Sr0.55MnO3 films

G. Panchal1, F. Stramaglia1, M. Krummenacher1, A. Kleibert1, C. W. Schneider2, D. Backes3, F. Kronast4, and C. A. F. Vaz1,*

  • *Contact author: carlos.vaz@psi.ch
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Phys. Rev. Materials 10, 084404 – Published 14 August, 2026

DOI: https://doi.org/10.1103/29ql-nkgl

Abstract

We report the evolution of the antiferromagnetic domain structure of epitaxial La0.45Sr0.55MnO3 (LSMO) ultrathin films with thickness in the range from 5–50 unit cells (uc), using x-ray photoemission electron microscopy (XPEEM). While the 5 uc thick LSMO shows no magnetic contrast down to ∼80K, thicker films display a multidomain antiferromagnetic configuration with a nonmonotonic variation in the characteristic domain size from 0.3 µm at 10 uc, to 3–5 µm at 15–16 uc and 1 µm for 50 uc. Post-growth annealing is found not to impact strongly the magnetic domain state. In contrast, for a 15 uc film grown on a substrate characterized by large atomic steps (∼1µm), we observe much larger antiferromagnetic domains and the presence of net magnetic moment in the form of stripes with alternating contrast, assigned to the signal from the top uncompensated spins of the A-type antiferromagnetic state of LSMO. From the combined antiferromagnetic domain structure and the net magnetic moment contrast, we determine the exact orientation of the Néel vector, including at domain walls. We describe the antiferromagnetic domain size distribution in terms of interface and bulk contributions to the density of defects that pin the antiferromagnetic domain walls and which determine the equilibrium domain configuration. Our results demonstrate the impact of thickness and defects on the antiferromagnetic domain size and constitute a stepping stone in controlling the antiferromagnetic domain state required for oxide antiferromagnetic device applications.

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Phys. Rev. Materials 10, 084404– Published 14 August, 2026
  • Received 19 May 2026
  • Accepted 17 July 2026
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