Self-organized vacancy order in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><msub><mi>Pr</mi><mn>9</mn></msub><msub><mi>Ge</mi><mn>16</mn></msub></mrow></math>

Jayashani S. T. Wickramasinghe; Melissa G. Anderson; Kelci Graville; Gregory T. McCandless; Zachary J. Morgan; Brianna R. Billingsley; Tai Kong; Hyunsoo Kim; Aleksandr V. Chernatynskiy; Simon G. Mitchell; Liang Wu; Julia Y. Chan; Feng Ye; Halyna Hodovanets

doi:10.1103/1jfr-6fkb

Self-organized vacancy order in $\Pr_{9} {Ge}_{16}$

Jayashani S. T. Wickramasinghe ¹, Melissa G. Anderson ², Kelci Graville¹, Gregory T. McCandless², Zachary J. Morgan ³, Brianna R. Billingsley ⁴, Tai Kong ⁴, Hyunsoo Kim ^1,5, Aleksandr V. Chernatynskiy ¹ et al.

Simon G. Mitchell ⁶, Liang Wu ⁶, Julia Y. Chan ², Feng Ye ³, and Halyna Hodovanets ^1,5,*

¹Department of Physics, Missouri University of Science and Technology, Rolla, Missouri 65409, USA
²Department of Chemistry and Biochemistry, Baylor University, Waco, Texas 76798, USA
³Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
⁴Department of Physics, University of Arizona, Tucson, Arizona 85721, USA
⁵Materials Research Center, Missouri University of Science and Technology, Rolla, Missouri 65409, USA
⁶Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA

^*Contact author: halyna.hodovanets@mst.edu

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Phys. Rev. Materials 10, 084401 – Published 5 August, 2026

DOI: https://doi.org/10.1103/1jfr-6fkb

Abstract

In this work, we report the discovery of a new crystal structure on the Ge-rich side of the Pr-Ge binary phase diagram. Using a high-temperature flux technique, we grew single crystals of $\Pr_{9} {Ge}_{16}$ , which adopt a previously unreported orthorhombic $F d d 2$ structure type featuring ordered Ge vacancies. We present the anisotropic magnetic properties and identify the crystallographic $b$ axis perpendicular to the crystal plane as the magnetic easy axis. Temperature-dependent resistivity measurements reveal metallic behavior with a distinct anomaly at $T_{C}$ = 14.3 K. Hall resistivity data indicate that electronlike carriers dominate, with a carrier concentration on the order of $10^{27} m^{- 3}$ . The magnetic order is readily suppressed by a magnetic field of approximately 0.4 T applied along the easy $b$ axis.

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Self-organized vacancy order in $\Pr_{9} {Ge}_{16}$

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Self-organized vacancy order in Pr9Ge16

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Self-organized vacancy order in $\Pr_{9} {Ge}_{16}$