We report the epitaxial stabilization of GdAuSb films and GdAuSb/LaAuSb superlattices via molecular beam epitaxy on (0001)-oriented ${\mathrm{Al}}_2{\mathrm{O}}_3$ substrates. GdAuSb crystallizes in the Au-Au dimerized YPtAs structure type (space group $P{6}_3/mmc$), the same structure as the Dirac semimetal LaAuSb. Angle-resolved photoemission spectroscopy (ARPES) measurements show similar near $E_F$ bandstructures for GdAuSb and LaAuSb, plus a rigid band shift for GdAuSb toward more holelike behavior and corelike Gd $4f$ states $\sim 9\mathrm{eV}$ below the Fermi energy. LaAuSb/GdAuSb superlattices exhibit sharp superlattice fringes by x-ray diffraction and atomically precise interfaces by scanning transmission electron microscopy. Superlattices display two transitions in temperature-dependent resistvity, compared to a single Néel temperature for thick GdAuSb films. Superlattices of $Ln\mathrm{AuSb}$ materials ($Ln=$ rare earth) with atomically abrupt interfaces offer an epitaxial platform for control of magnetic and topological order via tunable intralayer exchange and reduced dimensionality.

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• Intermetallic compounds
• Magnetic thin films
• Angle-resolved photoemission spectroscopy
• Molecular beam epitaxy