Understanding interfacial thermal transport is essential for improving thermal management in high-speed power electronic devices, where the efficient removal of excess heat is a critical challenge. In this study, a machine-learning interatomic potential with near-first-principles accuracy was employed to investigate the interfacial thermal conductance (ITC) between [111]-oriented cubic boron arsenide (cBAs) and [0001]-oriented 4H silicon carbide (4H-SiC), as well as its dependence on uniaxial stress. Among all possible bonding configurations at the cBAs(111)/4H-SiC(0001) interface, the B–C bonded interface was identified as the most energetically favorable. Nonequilibrium molecular-dynamics simulations revealed that, under ambient conditions (300 K and 0 GPa), the ITC of the B–C interface reaches $353\pm 6\mathrm{MW}{\mathrm{m}}^{-2}{\mathrm{K}}^{-1}$, and increases monotonically to $460\pm 3\mathrm{MW}{\mathrm{m}}^{-2}{\mathrm{K}}^{-1}$ under a uniaxial stress of 25 GPa perpendicular to the interface. For comparison, the As–C-bonded interface exhibits a lower ITC, increasing from $233\pm 7$ to $318\pm 6\mathrm{MW}{\mathrm{m}}^{-2}{\mathrm{K}}^{-1}$ over the same stress range. These results demonstrate that proper interfacial bonding and moderate uniaxial stress can significantly enhance thermal transport across the cBAs(111)/4H-SiC(0001) heterointerface, offering valuable insight for thermal design in next-generation power electronics.

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• Thermal boundary conductance