Isosurfaces of valence charge density (upper panels) and exciton distribution (lower panels) in Si (left panels) and in ZnO (right panels).

From the article:

Origin of the Variation of Exciton Binding Energy in Semiconductors
Marc Dvorak, Su-Huai Wei, and Zhigang Wu
Phys. Rev. Lett. 110, 016402 (2013)

View Issue Table of Contents