Browse Issues:

HIGHLIGHTED ARTICLES

Effective field theory for a p-wave superconductor in the subgap regime

T. H. Hansson, T. Kvorning, V. P. Nair, and G. J. Sreejith

Phys. Rev. B 91, 075116 (2015) - Published 19 February, 2015

An important theoretical approach to topologically ordered phases is based on topological field theories. These directly incorporate such important features as the absence of bulk excitations, ground state degeneracy on topologically nontrivial manifolds, and dynamical edge states. The authors construct an effective field theory for a two-dimensional spinless p-wave superconductor that describes the topological properties of the bulk state, and also provides a model for the subgap states at vortex cores and edges.

Ultrafast dynamic conductivity and scattering rate saturation of photoexcited charge carriers in silicon investigated with a midinfrared continuum probe

Fanqi Meng, Mark D. Thomson, Bo E. Sernelius, Michael Jörger, and Hartmut G. Roskos

Phys. Rev. B 91, 075201 (2015) - Published 4 February, 2015

The optical response of photoinduced charge-carrier plasmas in silicon are measured over a wide range of excitation densities in a pump-probe experiment. By using not just traditional terahertz probe pulses but also terahertz-midinfrared, a better estimate of the charge carrier scattering time is found. A detailed analysis of the early time dynamics in their experiment is also presented.

Hydrogen centers and the conductivity of In2O3 single crystals

Weikai Yin, Kirby Smithe, Philip Weiser, Michael Stavola, W. Beall Fowler, Lynn Boatner, Stephen J. Pearton, David C. Hays, and Sandro G. Koch

Phys. Rev. B 91, 075208 (2015) - Published 24 February, 2015

Transparent conducting oxides, such as In2O3, are optically transparent wide band gap semiconductors with high electrical conductivity and are used in applications such as transparent electrical circuits and flat panel displays. Some previous research has argued that conductivity in In2O3 is caused mainly by oxygen vacancies, as in other transparent conducting oxides. Using infrared absorbtion spectroscopy on single-crystal In2O3, the authors show that, consistent with theory, interstital hydrogen forms shallow donors, which make an important contribution to the n-type conductivity.

Strain field of a buried oxide aperture

F. Kießling, T. Niermann, M. Lehmann, J.-H. Schulze, A. Strittmatter, A. Schliwa, and U. W. Pohl

Phys. Rev. B 91, 075306 (2015) - Published 12 February, 2015

Site-controlled and scalable growth of quantum dots in semiconductors is an active area of research important for a number of applications. In one approach the position of the quantum dots is determined by artificially engineered local strain fields in the growth surface. A more complete and accurate understanding of the growth process depends on the ability to accurately the strain, and this is what the authors pursue in this article using high-precision dark-field electron holography.

Multiscale approach to the electronic structure of doped semiconductor surfaces

Ofer Sinai, Oliver T. Hofmann, Patrick Rinke, Matthias Scheffler, Georg Heimel, and Leeor Kronik

Phys. Rev. B 91, 075311 (2015) - Published 24 February, 2015

Accurate nanoscale atomistic treatment of semiconductor surfaces, together with accurate microscale treatment of electronic effects induced in the semiconductor near-surface region, is crucial for a very large range of issues in modern electronics. However, this has been a difficult challenge for modern computational materials science. In this paper, this goal is achieved by means of a new multiscale approach that couples seamlessly short-range quantum mechanical effects with long-range electrostatic effects. The usefulness of this approach is demonstrated on a variety of silicon surfaces.

Nonequilibrium plasmons with gain in graphene

A. Freddie Page, Fouad Ballout, Ortwin Hess, and Joachim M. Hamm

Phys. Rev. B 91, 075404 (2015) - Published 3 February, 2015

A theoretical evaluation of the dynamic polarizability of graphene in a photoexcited carrier inversion state shows that graphene can support nonequilibrium plasmons with gain. The authors predict that the experimental observation of plasmon amplification in graphene is possible under realistic conditions. This would help overcome the barriers to using graphene in plasmonics due to plasmon losses.

ARTICLES

Electronic structure and strongly correlated systems

Fractional quantum Hall states of dipolar gases in Chern bands

Tian-Sheng Zeng and Lan Yin

Phys. Rev. B 91, 075102 (2015) - Published 4 February, 2015

Classification of nematic order in 2 + 1 dimensions: Dislocation melting and O(2)/ZN lattice gauge theory

Ke Liu (刘科 子竞), Jaakko Nissinen, Zohar Nussinov, Robert-Jan Slager, Kai Wu, and Jan Zaanen

Phys. Rev. B 91, 075103 (2015) - Published 5 February, 2015

Fine structure of spectra in the antiferromagnetic phase of the Kondo lattice model

Žiga Osolin, Thomas Pruschke, and Rok Žitko

Phys. Rev. B 91, 075105 (2015) - Published 9 February, 2015

Surface plasmons and reflectance of U(1) spin liquid states with large spinon Fermi surfaces

Yuan-Fei Ma and Tai-Kai Ng

Phys. Rev. B 91, 075106 (2015) - Published 9 February, 2015

Superfluid amplitude fluctuations above Tc in a unitary Fermi gas

Hua Li, Jason Jackiewicz, and Kevin S. Bedell

Phys. Rev. B 91, 075107 (2015) - Published 10 February, 2015

Nickel-titanium double perovskite: A three-dimensional spin-1 Heisenberg antiferromagnet

M. Karolak, M. Edelmann, and G. Sangiovanni

Phys. Rev. B 91, 075108 (2015) - Published 11 February, 2015

Ab initio theory of spin entanglement in atoms and molecules

S. Pittalis, F. Troiani, C. A. Rozzi, and G. Vignale

Phys. Rev. B 91, 075109 (2015) - Published 11 February, 2015

Large-amplitude spin oscillations triggered by nonequilibrium strongly correlated t2g electrons

Malte Behrmann and Frank Lechermann

Phys. Rev. B 91, 075110 (2015) - Published 11 February, 2015

Spontaneous symmetry breaking of magnetostriction in metals with multivalley band structure

G. P. Mikitik and Yu. V. Sharlai

Phys. Rev. B 91, 075111 (2015) - Published 12 February, 2015

Global phase diagram of competing ordered and quantum spin-liquid phases on the kagome lattice

Shou-Shu Gong, Wei Zhu, Leon Balents, and D. N. Sheng

Phys. Rev. B 91, 075112 (2015) - Published 17 February, 2015

Correlation between Mn and Ru valence states and magnetic phases in SrMn1−xRuxO3

D. H. Kim, Eunsook Lee, Hyun Woo Kim, S. Kolesnik, B. Dabrowski, Chang-Jong Kang, Minjae Kim, B. I. Min, Han-Koo Lee, J.-Y. Kim, and J.-S. Kang

Phys. Rev. B 91, 075113 (2015) - Published 17 February, 2015

Universal topological data for gapped quantum liquids in three dimensions and fusion algebra for non-Abelian string excitations

Heidar Moradi and Xiao-Gang Wen

Phys. Rev. B 91, 075114 (2015) - Published 17 February, 2015

Effect of single impurity on free fermion entanglement entropy

Mohammad Pouranvari, Kun Yang, and Alexander Seidel

Phys. Rev. B 91, 075115 (2015) - Published 18 February, 2015

Effective field theory for a p-wave superconductor in the subgap regime

T. H. Hansson, T. Kvorning, V. P. Nair, and G. J. Sreejith

Phys. Rev. B 91, 075116 (2015) - Published 19 February, 2015

An important theoretical approach to topologically ordered phases is based on topological field theories. These directly incorporate such important features as the absence of bulk excitations, ground state degeneracy on topologically nontrivial manifolds, and dynamical edge states. The authors construct an effective field theory for a two-dimensional spinless p-wave superconductor that describes the topological properties of the bulk state, and also provides a model for the subgap states at vortex cores and edges.

Electronic and magnetic structures of the ferroelectric compound PbBaFe2O5

Wei Li, Xuguang Xu, Xin-Yuan Wei, Gang Mu, C. S. Ting, and Yan Chen

Phys. Rev. B 91, 075117 (2015) - Published 20 February, 2015

Ubiquity of linear resistivity at intermediate temperature in bad metals

G. R. Boyd, V. Zlatić, and J. K. Freericks

Phys. Rev. B 91, 075118 (2015) - Published 20 February, 2015

Large-scale atomic effective pseudopotential program including an efficient spin-orbit coupling treatment in real space

F. Zirkelbach, P.-Y. Prodhomme, Peng Han, R. Cherian, and G. Bester

Phys. Rev. B 91, 075119 (2015) - Published 20 February, 2015

Kondo effect in the quasiskutterudite Yb3Os4Ge13

C. L. Yang, X. Wang, X. Zhang, D. S. Wu, M. Liu, P. Zheng, J. Y. Yao, Z. Z. Li, Y.-F. Yang, Y. G. Shi, J. L. Luo, and N. L. Wang

Phys. Rev. B 91, 075120 (2015) - Published 20 February, 2015

Phase diagrams of one-dimensional half-filled two-orbital SU(N) cold fermion systems

V. Bois, S. Capponi, P. Lecheminant, M. Moliner, and K. Totsuka

Phys. Rev. B 91, 075121 (2015) - Published 23 February, 2015

Relativistic tight-binding approximation method for materials immersed in a uniform magnetic field: Application to crystalline silicon

Katsuhiko Higuchi, Dipendra Bahadur Hamal, and Masahiko Higuchi

Phys. Rev. B 91, 075122 (2015) - Published 23 February, 2015

Covalency driven low-temperature structural distortion and its effect on electronic structure of Hg2Ru2O7

Santu Baidya and T. Saha-Dasgupta

Phys. Rev. B 91, 075123 (2015) - Published 23 February, 2015

Absence of a quantum limit to charge diffusion in bad metals

Nandan Pakhira and Ross H. McKenzie

Phys. Rev. B 91, 075124 (2015) - Published 23 February, 2015

LDA+U calculation of electronic and thermoelectric properties of doped CuCoO2

K. Knížek

Phys. Rev. B 91, 075125 (2015) - Published 23 February, 2015

Structural, electronic, and spectral properties of six ZnO bulk polymorphs

Lorenzo Sponza, Jacek Goniakowski, and Claudine Noguera

Phys. Rev. B 91, 075126 (2015) - Published 23 February, 2015

Electronic and spin states of SrRuO3 thin films: An x-ray magnetic circular dichroism study

S. Agrestini, Z. Hu, C.-Y. Kuo, M. W. Haverkort, K.-T. Ko, N. Hollmann, Q. Liu, E. Pellegrin, M. Valvidares, J. Herrero-Martin, P. Gargiani, P. Gegenwart, M. Schneider, S. Esser, A. Tanaka, A. C. Komarek, and L. H. Tjeng

Phys. Rev. B 91, 075127 (2015) - Published 24 February, 2015

Low-energy description of the metal-insulator transition in the rare-earth nickelates

Alaska Subedi, Oleg E. Peil, and Antoine Georges

Phys. Rev. B 91, 075128 (2015) - Published 25 February, 2015

Thermal conductivity across the metal-insulator transition in the single-crystalline hyperkagome antiferromagnet Na3+xIr3O8

B. Fauqué, Xiaofeng Xu, A. F. Bangura, E. C. Hunter, A. Yamamoto, K. Behnia, A. Carrington, H. Takagi, N. E. Hussey, and R. S. Perry

Phys. Rev. B 91, 075129 (2015) - Published 25 February, 2015

Heavy surface state in a possible topological Kondo insulator: Magnetothermoelectric transport on the (011) plane of SmB6

Yongkang Luo, Hua Chen, Jianhui Dai, Zhu-an Xu, and J. D. Thompson

Phys. Rev. B 91, 075130 (2015) - Published 25 February, 2015

Ferromagnetic critical behavior in U(Co1−xFex)Al (0≤x≤0.02) studied by Co59 nuclear quadrupole resonance measurements

K. Karube, T. Hattori, K. Ishida, and N. Kimura

Phys. Rev. B 91, 075131 (2015) - Published 26 February, 2015

Spectral function of the Higgs mode in 4−ε dimensions

Yaniv Tenenbaum Katan and Daniel Podolsky

Phys. Rev. B 91, 075132 (2015) - Published 26 February, 2015

Frustrated fcc antiferromagnet Ba2YOsO6: Structural characterization, magnetic properties, and neutron scattering studies

E. Kermarrec, C. A. Marjerrison, C. M. Thompson, D. D. Maharaj, K. Levin, S. Kroeker, G. E. Granroth, R. Flacau, Z. Yamani, J. E. Greedan, and B. D. Gaulin

Phys. Rev. B 91, 075133 (2015) - Published 26 February, 2015

Optical properties of Cu-chalcogenide photovoltaic absorbers from self-consistent GW and the Bethe-Salpeter equation

Sabine Körbel, David Kammerlander, Rafael Sarmiento-Pérez, Claudio Attaccalite, Miguel A. L. Marques, and Silvana Botti

Phys. Rev. B 91, 075134 (2015) - Published 27 February, 2015

Semiconductors I: bulk

Ultrafast dynamic conductivity and scattering rate saturation of photoexcited charge carriers in silicon investigated with a midinfrared continuum probe

Fanqi Meng, Mark D. Thomson, Bo E. Sernelius, Michael Jörger, and Hartmut G. Roskos

Phys. Rev. B 91, 075201 (2015) - Published 4 February, 2015

The optical response of photoinduced charge-carrier plasmas in silicon are measured over a wide range of excitation densities in a pump-probe experiment. By using not just traditional terahertz probe pulses but also terahertz-midinfrared, a better estimate of the charge carrier scattering time is found. A detailed analysis of the early time dynamics in their experiment is also presented.

First-principles multiple-barrier diffusion theory: The case study of interstitial diffusion in CdTe

Ji-Hui Yang, Ji-Sang Park, Joongoo Kang, and Su-Huai Wei

Phys. Rev. B 91, 075202 (2015) - Published 17 February, 2015

Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory

Miguel A. Caro, Stefan Schulz, and Eoin P. O'Reilly

Phys. Rev. B 91, 075203 (2015) - Published 17 February, 2015

Ordering-induced direct-to-indirect band gap transition in multication semiconductor compounds

Ji-Sang Park, Ji-Hui Yang, Ana Kanevce, Sukgeun Choi, Ingrid L. Repins, and Su-Huai Wei

Phys. Rev. B 91, 075204 (2015) - Published 17 February, 2015

Modification of electronic structure and thermoelectric properties of hole-doped tungsten dichalcogenides

M. Kriener, A. Kikkawa, T. Suzuki, R. Akashi, R. Arita, Y. Tokura, and Y. Taguchi

Phys. Rev. B 91, 075205 (2015) - Published 18 February, 2015

First-principles calculations of phonons and Raman spectra in monoclinic CsSnCl3

Ling-yi Huang and Walter R. L. Lambrecht

Phys. Rev. B 91, 075206 (2015) - Published 20 February, 2015

Ab initio electronic structure, optical, and magneto-optical properties of MnGaAs digital ferromagnetic heterostructures

Patrizia Rosa, Davide Sangalli, Giovanni Onida, and Alberto Debernardi

Phys. Rev. B 91, 075207 (2015) - Published 24 February, 2015

Hydrogen centers and the conductivity of In2O3 single crystals

Weikai Yin, Kirby Smithe, Philip Weiser, Michael Stavola, W. Beall Fowler, Lynn Boatner, Stephen J. Pearton, David C. Hays, and Sandro G. Koch

Phys. Rev. B 91, 075208 (2015) - Published 24 February, 2015

Transparent conducting oxides, such as In2O3, are optically transparent wide band gap semiconductors with high electrical conductivity and are used in applications such as transparent electrical circuits and flat panel displays. Some previous research has argued that conductivity in In2O3 is caused mainly by oxygen vacancies, as in other transparent conducting oxides. Using infrared absorbtion spectroscopy on single-crystal In2O3, the authors show that, consistent with theory, interstital hydrogen forms shallow donors, which make an important contribution to the n-type conductivity.

Hydrodynamic description of trapped ultracold paraexcitons in Cu2O

S. Sobkowiak, D. Semkat, and H. Stolz

Phys. Rev. B 91, 075209 (2015) - Published 26 February, 2015

Semiconductors II: surfaces, interfaces, microstructures, and related topics

Charge-noise tolerant exchange gates of singlet-triplet qubits in asymmetric double quantum dots

Tuukka Hiltunen, Hendrik Bluhm, Sebastian Mehl, and Ari Harju

Phys. Rev. B 91, 075301 (2015) - Published 3 February, 2015

Theory of surface second-harmonic generation for semiconductors including effects of nonlocal operators

Sean M. Anderson, Nicolas Tancogne-Dejean, Bernardo S. Mendoza, and Valérie Véniard

Phys. Rev. B 91, 075302 (2015) - Published 5 February, 2015

Nearly-free electronlike surface resonance of a β−Si3N4(0001)/Si(111)−8×8 interface

R. Flammini, P. Allegrini, F. Wiame, R. Belkhou, F. Ronci, S. Colonna, D. M. Trucchi, F. Filippone, S. K. Mahatha, P. M. Sheverdyaeva, and P. Moras

Phys. Rev. B 91, 075303 (2015) - Published 9 February, 2015

Extended linear regime of cavity-QED enhanced optical circular birefringence induced by a charged quantum dot

C. Y. Hu and J. G. Rarity

Phys. Rev. B 91, 075304 (2015) - Published 10 February, 2015

Optical control of spin textures in quasi-one-dimensional polariton condensates

C. Antón, S. Morina, T. Gao, P. S. Eldridge, T. C. H. Liew, M. D. Martín, Z. Hatzopoulos, P. G. Savvidis, I. A. Shelykh, and L. Viña

Phys. Rev. B 91, 075305 (2015) - Published 10 February, 2015

Strain field of a buried oxide aperture

F. Kießling, T. Niermann, M. Lehmann, J.-H. Schulze, A. Strittmatter, A. Schliwa, and U. W. Pohl

Phys. Rev. B 91, 075306 (2015) - Published 12 February, 2015

Site-controlled and scalable growth of quantum dots in semiconductors is an active area of research important for a number of applications. In one approach the position of the quantum dots is determined by artificially engineered local strain fields in the growth surface. A more complete and accurate understanding of the growth process depends on the ability to accurately the strain, and this is what the authors pursue in this article using high-precision dark-field electron holography.

Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator

V. N. Men'shov, V. V. Tugushev, S. V. Eremeev, P. M. Echenique, and E. V. Chulkov

Phys. Rev. B 91, 075307 (2015) - Published 17 February, 2015

Probing the collective excitations of a spinor polariton fluid

M. Van Regemortel, M. Wouters, and F. M. Marchetti

Phys. Rev. B 91, 075308 (2015) - Published 18 February, 2015

Magnetic field tuning of exciton-polaritons in a semiconductor microcavity

B. Piętka, D. Zygmunt, M. Król, M. R. Molas, A. A. L. Nicolet, F. Morier-Genoud, J. Szczytko, J. Łusakowski, P. Zięba, I. Tralle, P. Stępnicki, M. Matuszewski, M. Potemski, and B. Deveaud

Phys. Rev. B 91, 075309 (2015) - Published 18 February, 2015

Exciton band structure of monolayer MoS2

Fengcheng Wu, Fanyao Qu, and A. H. MacDonald

Phys. Rev. B 91, 075310 (2015) - Published 24 February, 2015

Multiscale approach to the electronic structure of doped semiconductor surfaces

Ofer Sinai, Oliver T. Hofmann, Patrick Rinke, Matthias Scheffler, Georg Heimel, and Leeor Kronik

Phys. Rev. B 91, 075311 (2015) - Published 24 February, 2015

Accurate nanoscale atomistic treatment of semiconductor surfaces, together with accurate microscale treatment of electronic effects induced in the semiconductor near-surface region, is crucial for a very large range of issues in modern electronics. However, this has been a difficult challenge for modern computational materials science. In this paper, this goal is achieved by means of a new multiscale approach that couples seamlessly short-range quantum mechanical effects with long-range electrostatic effects. The usefulness of this approach is demonstrated on a variety of silicon surfaces.

Electron-phonon deformation potential interaction in core-shell Ge-Si and Si-Ge nanowires

Darío G. Santiago-Pérez, C. Trallero-Giner, R. Pérez-Álvarez, Leonor Chico, and G. E. Marques

Phys. Rev. B 91, 075312 (2015) - Published 24 February, 2015

Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy

P. Liu, F. Martins, B. Hackens, L. Desplanque, X. Wallart, M. G. Pala, S. Huant, V. Bayot, and H. Sellier

Phys. Rev. B 91, 075313 (2015) - Published 25 February, 2015

Pulsed low-field electrically detected magnetic resonance

L. Dreher, F. Hoehne, H. Morishita, H. Huebl, M. Stutzmann, K. M. Itoh, and M. S. Brandt

Phys. Rev. B 91, 075314 (2015) - Published 25 February, 2015

Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces

Hui-Xiong Deng, Jun-Wei Luo, and Su-Huai Wei

Phys. Rev. B 91, 075315 (2015) - Published 26 February, 2015

Kinetics of optically excited charge carriers at the GaN surface

A. Winnerl, R. N. Pereira, and M. Stutzmann

Phys. Rev. B 91, 075316 (2015) - Published 26 February, 2015

Surface physics, nanoscale physics, low-dimensional systems

Pt atoms adsorbed on TiO2(110)−(1×1) studied with noncontact atomic force microscopy and first-principles simulations

Delia Fernández-Torre, Ayhan Yurtsever, Jo Onoda, Masayuki Abe, Seizo Morita, Yoshiaki Sugimoto, and Rubén Pérez

Phys. Rev. B 91, 075401 (2015) - Published 2 February, 2015

G′ band in double- and triple-walled carbon nanotubes: A Raman study

Thomas Ch. Hirschmann, Mildred S. Dresselhaus, Hiroyuki Muramatsu, Max Seifert, Ursula Wurstbauer, Eric Parzinger, Kornelius Nielsch, Yoong Ahm Kim, and Paulo T. Araujo

Phys. Rev. B 91, 075402 (2015) - Published 2 February, 2015

Increased porosity turns desorption to adsorption for gas bubbles near water-SiO2 interface

M. Boström, M. Dou, P. Thiyam, D. F. Parsons, O. I. Malyi, and C. Persson

Phys. Rev. B 91, 075403 (2015) - Published 2 February, 2015

Nonequilibrium plasmons with gain in graphene

A. Freddie Page, Fouad Ballout, Ortwin Hess, and Joachim M. Hamm

Phys. Rev. B 91, 075404 (2015) - Published 3 February, 2015

A theoretical evaluation of the dynamic polarizability of graphene in a photoexcited carrier inversion state shows that graphene can support nonequilibrium plasmons with gain. The authors predict that the experimental observation of plasmon amplification in graphene is possible under realistic conditions. This would help overcome the barriers to using graphene in plasmonics due to plasmon losses.

Relativistic dynamical spin excitations of magnetic adatoms

M. dos Santos Dias, B. Schweflinghaus, S. Blügel, and S. Lounis

Phys. Rev. B 91, 075405 (2015) - Published 4 February, 2015

Nonlocal interference and Hong-Ou-Mandel collisions of single Bogoliubov quasiparticles

D. Ferraro, J. Rech, T. Jonckheere, and T. Martin

Phys. Rev. B 91, 075406 (2015) - Published 4 February, 2015

Prediction of structural and metal-to-semiconductor phase transitions in nanoscale MoS2, WS2, and other transition metal dichalcogenide zigzag ribbons

F. Güller, A. M. Llois, J. Goniakowski, and C. Noguera

Phys. Rev. B 91, 075407 (2015) - Published 5 February, 2015

Spin-orbit interaction in GaAs wells: From one to two subbands

Jiyong Fu and J. Carlos Egues

Phys. Rev. B 91, 075408 (2015) - Published 5 February, 2015

Dissipative plasmon solitons in graphene nanodisk arrays

Daria A. Smirnova, Roman E. Noskov, Lev A. Smirnov, and Yuri S. Kivshar

Phys. Rev. B 91, 075409 (2015) - Published 5 February, 2015

Strain-induced edge magnetism at the zigzag edge of a graphene quantum dot

Shuai Cheng, Jinming Yu, Tianxing Ma, and N. M. R. Peres

Phys. Rev. B 91, 075410 (2015) - Published 11 February, 2015

Diffusion of Ga adatoms at the surface of GaAs(001) c(4×4)α and β reconstructions

Marcin Mińkowski and Magdalena A. Załuska–Kotur

Phys. Rev. B 91, 075411 (2015) - Published 11 February, 2015

Electronic states induced by nonmagnetic defects in two-dimensional topological insulators

Vladimir A. Sablikov and Aleksei A. Sukhanov

Phys. Rev. B 91, 075412 (2015) - Published 12 February, 2015

Two-photon interference from a quantum dot microcavity: Persistent pure dephasing and suppression of time jitter

Sebastian Unsleber, Dara P. S. McCutcheon, Michael Dambach, Matthias Lermer, Niels Gregersen, Sven Höfling, Jesper Mørk, Christian Schneider, and Martin Kamp

Phys. Rev. B 91, 075413 (2015) - Published 12 February, 2015

Phonon dispersion in hypersonic two-dimensional phononic crystal membranes

B. Graczykowski, M. Sledzinska, F. Alzina, J. Gomis-Bresco, J. S. Reparaz, M. R. Wagner, and C. M. Sotomayor Torres

Phys. Rev. B 91, 075414 (2015) - Published 13 February, 2015

Spin-orbit controlled quantum capacitance of a polar heterostructure

Kevin Steffen, Florian Loder, and Thilo Kopp

Phys. Rev. B 91, 075415 (2015) - Published 13 February, 2015

Quantum capacitance and compressibility of graphene: The role of Coulomb interactions

Yu. E. Lozovik, A. A. Sokolik, and A. D. Zabolotskiy

Phys. Rev. B 91, 075416 (2015) - Published 17 February, 2015

Predicting excitonic gaps of semiconducting single-walled carbon nanotubes from a field theoretic analysis

Robert M. Konik, Matthew Y. Sfeir, and James A. Misewich

Phys. Rev. B 91, 075417 (2015) - Published 17 February, 2015

Seebeck effects in two-dimensional spin transistors

M. I. Alomar, Llorenç Serra, and David Sánchez

Phys. Rev. B 91, 075418 (2015) - Published 17 February, 2015

Dynamics of quasiparticles in graphene under intense circularly polarized light

Dmitry Yudin, Olle Eriksson, and Mikhail I. Katsnelson

Phys. Rev. B 91, 075419 (2015) - Published 18 February, 2015

Interaction potential of FePt with the MgO(001) surface

R. Cuadrado and R. W. Chantrell

Phys. Rev. B 91, 075420 (2015) - Published 19 February, 2015

Formation of a nitride interface in epitaxial graphene on SiC (0001)

Yoshiho Masuda, Wataru Norimatsu, and Michiko Kusunoki

Phys. Rev. B 91, 075421 (2015) - Published 20 February, 2015

Collective modes in anisotropic double-layer systems

A. S. Rodin and A. H. Castro Neto

Phys. Rev. B 91, 075422 (2015) - Published 20 February, 2015

Exploiting interfacial and size effects to construct oxide superlattices with robust and tunable magnetoelectric properties at room temperature

Yurong Yang, L. Bellaiche, and Jorge Íñiguez

Phys. Rev. B 91, 075423 (2015) - Published 23 February, 2015

Magnetoplasmons in high electron mobility CdTe/CdMgTe quantum wells

I. Grigelionis, K. Nogajewski, G. Karczewski, T. Wojtowicz, M. Czapkiewicz, J. Wróbel, H. Boukari, H. Mariette, and J. Łusakowski

Phys. Rev. B 91, 075424 (2015) - Published 24 February, 2015

Probing barrier transmission in ballistic graphene

Daniel Gunlycke and Carter T. White

Phys. Rev. B 91, 075425 (2015) - Published 24 February, 2015

Interplay between Raman shift and thermal expansion in graphene: Temperature-dependent measurements and analysis of substrate corrections

S. Linas, Y. Magnin, B. Poinsot, O. Boisron, G. D. Förster, V. Martinez, R. Fulcrand, F. Tournus, V. Dupuis, F. Rabilloud, L. Bardotti, Z. Han, D. Kalita, V. Bouchiat, and F. Calvo

Phys. Rev. B 91, 075426 (2015) - Published 24 February, 2015

Kinetic Monte Carlo simulation of self-organized pattern formation induced by ion beam sputtering using crater functions

Zhangcan Yang, Michael A. Lively, and Jean Paul Allain

Phys. Rev. B 91, 075427 (2015) - Published 26 February, 2015

Transition states, electronic structure, and magnetic properties of small-sized nickel clusters

Omar López-Estrada and Emilio Orgaz

Phys. Rev. B 91, 075428 (2015) - Published 26 February, 2015

Ultrathin Bi(110) films on Si(111)3×3−B substrates

Ikuya Kokubo, Yusaku Yoshiike, Kan Nakatsuji, and Hiroyuki Hirayama

Phys. Rev. B 91, 075429 (2015) - Published 26 February, 2015

Thin films of a three-dimensional topological insulator in a strong magnetic field: Microscopic study

A. Pertsova, C. M. Canali, and A. H. MacDonald

Phys. Rev. B 91, 075430 (2015) - Published 26 February, 2015

Disentangling the magnetoelectric and thermoelectric transport in topological insulator thin films

Jinsong Zhang, Xiao Feng, Yong Xu, Minghua Guo, Zuocheng Zhang, Yunbo Ou, Yang Feng, Kang Li, Haijun Zhang, Lili Wang, Xi Chen, Zhongxue Gan, Shou-Cheng Zhang, Ke He, Xucun Ma, Qi-Kun Xue, and Yayu Wang

Phys. Rev. B 91, 075431 (2015) - Published 26 February, 2015

Topological phase driven by confinement effects in Bi bilayers

Erika N. Lima and Tome M. Schmidt

Phys. Rev. B 91, 075432 (2015) - Published 26 February, 2015

Valley Zeeman effect and spin-valley polarized conductance in monolayer MoS2 in a perpendicular magnetic field

Habib Rostami and Reza Asgari

Phys. Rev. B 91, 075433 (2015) - Published 26 February, 2015

Identification of pristine and defective graphene nanoribbons by phonon signatures in the electron transport characteristics

Rasmus B. Christensen, Thomas Frederiksen, and Mads Brandbyge

Phys. Rev. B 91, 075434 (2015) - Published 26 February, 2015

Coherent tunneling by adiabatic passage of an exchange-only spin qubit in a double quantum dot chain

E. Ferraro, M. De Michielis, M. Fanciulli, and E. Prati

Phys. Rev. B 91, 075435 (2015) - Published 26 February, 2015

Charge transfer from delocalized excited states in a bulk heterojunction material

Loren G. Kaake, Daniel Moses, and Alan J. Heeger

Phys. Rev. B 91, 075436 (2015) - Published 26 February, 2015

ERRATA

Erratum: Role of charge separation mechanism and local disorder at hybrid solar cell interfaces [Phys. Rev. B 91, 035304 (2015)]

Philipp Ehrenreich, Thomas Pfadler, Francis Paquin, Laura-Isabelle Dion-Bertrand, Olivier Paré-Labrosse, Carlos Silva, Jonas Weickert, and Lukas Schmidt-Mende

Phys. Rev. B 91, 079901 (2015) - Published 17 February, 2015

Erratum: Crystalline GeTe-based phase-change alloys: Disorder in order [Phys. Rev. B 86, 045212 (2012)]

Milos Krbal, Alexander V. Kolobov, Paul Fons, Junji Tominaga, S. R. Elliott, J. Hegedus, A. Giussani, K. Perumal, R. Calarco, T. Matsunaga, N. Yamada, K. Nitta, and T. Uruga

Phys. Rev. B 91, 079902 (2015) - Published 19 February, 2015

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