Random nucleation and growth kinetics
Clinton DeW. Van Siclen
Phys. Rev. B 54, 11845 (1996) - Published 1 November, 1996
Single C-C bond in (
G. Oszlányi, G. Bortel, G. Faigel, L. Gránásy, G. M. Bendele, P. W. Stephens, and L. Forró
Phys. Rev. B 54, 11849 (1996) - Published 1 November, 1996
Use of atomic-force microscopy and of a parallel irradiation geometry for in-depth characterization of damage produced by swift Kr ions in silicon
L. P. Biró, J. Gyulai, K. Havancsak, A. Yu. Didyk, S. Bogen, and L. Frey
Phys. Rev. B 54, 11853 (1996) - Published 1 November, 1996
Calculation of elastic constants in defected and amorphous silicon by quantum simulations
G. De Sandre, L. Colombo, and C. Bottani
Phys. Rev. B 54, 11857 (1996) - Published 1 November, 1996
Ground-state properties and high-pressure phase of beryllium chalcogenides BeSe, BeTe, and BeS
A. Muñoz, P. Rodríguez-Hernández, and A. Mujica
Phys. Rev. B 54, 11861 (1996) - Published 1 November, 1996
Phase selection and transformation kinetics in
L. Gránásy, S. Pekker, O. Chauvet, and L. Forró
Phys. Rev. B 54, 11865 (1996) - Published 1 November, 1996
X-ray study of the ferroelastic incommensurate phase of under uniaxial pressure
D. R. Ventura, N. L. Speziali, and M. A. Pimenta
Phys. Rev. B 54, 11869 (1996) - Published 1 November, 1996