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Fine structure splitting cancellation in highly asymmetric InAs/InP droplet epitaxy quantum dots

N. R. S. van Venrooij1,2, A. R. da Cruz1,2, R. S. R. Gajjela2, P. M. Koenraad2, Craig E. Pryor1, and Michael E. Flatté1,2,*

  • 1Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USA
  • 2Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ, The Netherlands

  • *michaelflatte@quantumsci.net

Recent progress and applications of III–V quantum dots in quantum technologies

Zhikai Ma, Shiyao Wu, Hancong Li, Xiqing Chen, Kai Peng, Chenjiang Qian, Kuijuan Jin, Qihuang Gong, and Xiulai Xu

Applied Physics Reviews 13 011313 (2026)

An atomically resolved study of droplet epitaxy InAs quantum dots grown on InGa(As,P)/InP by MOVPE for quantum photonic applications

E. G. Banfi, E. M. Sala, R. S. R. Gajjela, J. Heffernan, and P. M. Koenraad

Journal of Applied Physics 137 134401 (2025)

Suppression of Exciton Fine-Structure Splitting in Anisotropic Colloidal Quantum Dots for Applications in Quantum Communications

Serguei V. Goupalov

J. Phys. Chem. Lett. 16 10483 (2025)

No title available

V. M. Fomin, V. N. Gladilin, J. van Bree, N. R. S. van Venrooij, M. E. Flatté, and P. M. Koenraad

No title available

Vladimir M. Fomin

Exciton Fine Structure in Axially Symmetric Quantum Dots and Rods of III–V and II–VI Semiconductors

Serguei V. Goupalov

J. Phys. Chem. Lett. 15 11753 (2024)

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