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Stable 2R van der Waals heterostructures of NbS2 and MSe2 for M=Mo and W

Tetsuro Habe

  • Nagamori Institute of Actuators, Kyoto University of Advanced Science, Kyoto 615-8577, Japan

Electrical contact between 2D material NbS2 and WSSe

Jingjun Chen, Zelong Ma, Danni Wang, Xu Li, Songyang Li, and Baoan Bian

Physica E: Low-dimensional Systems and Nanostructures 168 116179 (2025)

Effects of electron-electron interactions on quasiparticle properties in transition metal dichalcogenide monolayers

Nguyen Truong Co, Le Thi Ngoc Bao, H. N. T. Phung, and Le Van Tan

Phys. Rev. B 112 235409 (2025)

Finite-temperature properties of monolayer MoS2 : Role of electron-electron interactions

Nguyen Truong Co, Le Tri Dat, and Le Van Tan

Phys. Rev. B 111 155415 (2025)

Theoretical study about band-gap and velocity Fermi renormalization of carrier density in monolayer transition-metal dichalcogenides

Le Van Tan

Materials Science and Engineering: B 314 117995 (2025)

Many-body exchange–correlation effects on the lowest energy states of MoS2 monolayers at finite temperatures

Le Van Tan, Do Muoi, and Nguyen Truong Co

Computational Materials Science 258 114058 (2025)

Roles of chalcogen sublayers of 1H transition metal dichalcogenides in metal-semiconductor van der Waals heterostructures

Tetsuro Habe

Phys. Rev. B 109 075308 (2024)

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