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Physical Review B

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ACS Appl. Nano Mater. (1)Infrared Physics & Technology (1)Journal of Solid State Chemistry (1)

Articles Citing

Modeling neutral defects in III-V ternary alloys with a special quasirandom structure: Analysis of As- and III-site point defects in InGaAs

Peter A. Schultz ^*

Sandia National Laboratories, Albuquerque, New Mexico 87185-1322, USA

^*Contact author: paschul.xnl@gmail.com

Radiation effects and structural optimization of infrared avalanche photodiodes: a review

Hafiz Ghullam Rasool, Furong Liu, Yinghao Wang, and Zulfiqar Ali

Infrared Physics & Technology 160 106955 (2027)

Microscopic origins of electron–hole formation entropy in InGaAs and InAsP: Insights from photoluminescence and first-principles calculations

S. Bahareh Seyedein Ardebili, Behnam Zeinalvand Farzin, and Jong Su Kim

Journal of Solid State Chemistry 363 126262 (2026)

Shockley–Read–Hall Recombination in Indium Gallium Nitride Nanolayer: A Density Functional Theory Study

Kisang Byun, Arindam Sannyal, Dohee Kim, Sang Ho Jeon, Sung-Chan Jo, and Joonkyung Jang

ACS Appl. Nano Mater. 9 9478 (2026)

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ISSN 2469-9969 (online), 2469-9950 (print).

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