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Hexagonal Ge/Si0.25Ge0.75 quantum wells: Prediction of quantization and light-emission strength

Abderrezak Belabbes1,2,*, Martin Keller2, Jürgen Furthmüller2, Silvana Botti3,2, and Friedhelm Bechstedt2

  • 1Department of Physics, Sultan Qaboos University, P.O. Box 36, PC 123, Muscat, Oman
  • 2Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
  • 3Research Center Future Energy Materials and Systems, Interdisciplinary Centre for Advanced Materials Simulation, Faculty of Physics and Astronomy, Ruhr University Bochum, Universitätsstrasse 150, 44801 Bochum, Germany

  • *Contact author: abderrezak.belabbes@uni-jena.de

Strain-enhanced optical gain of hexagonal Ge nanowire

Xue-Li 雪丽 Zhao 赵, Shan 闪 Guan 管, Zhigang 志刚 Song 宋, and Jun-Wei 军委 Luo 骆

Chinese Phys. B 35 067303 (2026)

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