Determining the fundamental mechanisms that are responsible for the observed anomalies in electrical transport is a key objective in condensed matter physics. Among these, quantum interference effects such as electron-electron (e-e) interaction and weak localization (WL) effects play an important role in determining the low-temperature ($T$) electrical transport behavior in disordered systems. Here, we provide experimental evidence for the observation of quantum interference effects driven low-temperature resistivity (ρ) minima in HoScSi and ErScSi. Temperature dependent magnetic and neutron diffraction studies clearly establish that HoScSi undergoes a transition from a paramagnetic to a commensurate antiferromagnetic (AFM) state near $T_{1\mathrm{Ho}}\sim 57$ K, which decreases to 28 K ($T_{1\mathrm{Er}}$) in ErScSi. Furthermore, in HoScSi, an incommensurate AFM state is observed below ∼35 K. Additionally, cluster glass phases are also noted in both intermetallics at lower $T$, which coexist with the antiferromagnetic state. These observed features have been attributed to the presence of ferromagnetic (FM) and AFM exchange interactions. In addition to this, ρ minima are noted near 20 K ($T_{\mathrm{minHo}}$) and 18 K ($T_{\mathrm{minEr}}$) in HoScSi and ErScSi, respectively. The systematic analysis of the magnetic field and $T$ dependence of ρ indicates that the observed anomaly originates from a disorder-enhanced e-e interaction and the WL effect.

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• Electrical conductivity
• Frustrated magnetism
• Weak localization
• Rare-earth magnetic materials
• Strongly correlated systems
• Magnetization measurements
• Neutron diffraction
• Resistivity measurements
• Specific heat measurements