Multiferroic van der Waals (vdW) heterostrucutres offer an exciting route toward high-performance nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructures composed of a ferromagnetic ${\mathrm{FeCl}}_2$ monolayer and a ferroelectric ${\mathrm{Sc}}_2{\mathrm{CO}}_2$ monolayer using first-principles density functional theory and quantum transport simulations. We show that ${\mathrm{FeCl}}_2/{\mathrm{Sc}}_2{\mathrm{CO}}_2$ heterostructure can be reversibly switched from semiconducting to half-metallic behavior by electrically modulating the ferroelectric polarization states of ${\mathrm{Sc}}_2{\mathrm{CO}}_2$. Intriguingly, the half-metallic phase exhibits a type-III broken gap-band alignment, which can be beneficial for tunneling field-effect transistor applications. We perform a quantum transport simulation based on a proof-of-concept two-terminal nanodevice to demonstrate all-electric-controlled valving effects uniquely enabled by the nonvolatile ferroelectric switching of the heterostructure. These findings unravel the potential of ${\mathrm{FeCl}}_2/{\mathrm{Sc}}_2{\mathrm{CO}}_2$ vdW heterostructures as a building block for designing the next generation of ultimately compact information processing, data storage, and spintronics devices.

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• Electronic structure
• Spintronics
• Interfaces
• Multiferroics
• Solid-solid interfaces
• Density functional calculations