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    Magneto-optical absorption in silicene and germanene induced by electric and Zeeman fields

    Do Muoi1, Nguyen N. Hieu2,3,*, Chuong V. Nguyen4, Bui D. Hoi5, Hieu V. Nguyen6, Nguyen D. Hien7, Nikolai A. Poklonski8, S. S. Kubakaddi9,†, and Huynh V. Phuc10,‡

    • 1University of Science-VNU.HCM, 227 Nguyen Van Cu Street, District 5, Ho Chi Minh City 700000, Vietnam
    • 2Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
    • 3Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
    • 4Department of Materials Science and Engineering, Le Quy Don Technical University, Hanoi 100000, Vietnam
    • 5Physics Department, University of Education, Hue University, Hue 530000, Vietnam
    • 6Department of Physics, The University of Da Nang, University of Science and Education, Da Nang 550000, Vietnam
    • 7Nha Trang National Ethnic Minority Pre-University, Nha Trang City, Khanh Hoa 650000, Vietnam
    • 8Physics Department, Belarusian State University, Minsk 220030, Belarus
    • 9Department of Physics, K. L. E. Technological University, Hubballi-580 031, Karnataka, India
    • 10Division of Theoretical Physics, Dong Thap University, Cao Lanh 870000, Vietnam

    • *Corresponding author: hieunn@duytan.edu.vn
    • †sskubakaddi@gmail.com
    • ‡Corresponding author: hvphuc@dthu.edu.vn

    Phys. Rev. B 101, 205408 – Published 7 May, 2020

    DOI: https://doi.org/10.1103/PhysRevB.101.205408

    Abstract

    We study the optical absorption properties of silicene and germanene in the presence of the perpendicular magnetic and electric fields. Their low-energy Landau level (LL) spectra are controllable by an external electric field, where the spin- and valley-degeneracy of the LLs are strongly influenced by the electric and Zeeman fields. The electric field has removed spin-degeneracy at a given valley. Analytical expressions for the magneto-optical absorption coefficient (MOAC) are expressed in the presence of the interaction between carriers and random impurities and the intrinsic phonons including the spin and valley effects. The results evaluated for the topological insulator and valley-spin-polarized metal phases showed that when the electric field is included, the MOAC peaks are separated for opposite spin cases where the splitting in germanene is stronger than that in silicene. The peak's intensity caused by the carrier-photon-impurity scattering is the highest, the next is the carrier-photon scattering, while the carrier-photon-phonon scattering shows the lowest in both materials. Among the different phonon modes, the out-of-plane (ZA) mode in silicene dominates the others, being attributed to its buckled atomic structure, which does not exist in graphene. When the ZA mode is taken into account, the estimated resultant mobility from the full-width at half-maximum is significantly supported by the experimental result in silicene.

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