We report a comparative study of the anomalous Hall effect (AHE) in single crystals of the two-dimensional van der Waals (vdWs) ferromagnets Fe3GeTe2 and Fe5GeTe2, grown by chemical vapor transport, over wide temperature and magnetic-field ranges. From magnetization, longitudinal resistivity ρxx, and Hall measurements, we extract the ordinary and anomalous Hall coefficients and scale the anomalous Hall conductivity σxy against the longitudinal conductivity σxx. In Fe3GeTe2, σxy is nearly independent of σxx and scales linearly with magnetization across the entire ordered phase, with the resistivity scaling ρxy = aρ2xx+bρxx yielding a negligible linear term; this identifies a predominantly intrinsic, Berry-curvature-driven AHE consistent with its nodal-line electronic structure. Fe5GeTe2 exhibits a mixed intrinsic and extrinsic anomalous Hall response. Below T∗ ≈ 100 K, the scaling analysis reveals a finite skew-scattering contribution, accompanied by a breakdown of the linear σxy–M relationship. In the vicinity of T*, we observe a broad maximum in the resistivity, a non-monotonic evolution of the anomalous Hall resistivity, and a pronounced change in the Hall coefficients, consistent with a temperature-dependent multiband electronic response involving both electron- and hole-like contributions. The emergence of a finite topological Hall contribution in the same temperature-field regime is consistent with the development of non-coplanar magnetic textures. These results establish a direct link between sublattice-dependent electronic structure and the intrinsic-to-extrinsic crossover of the AHE in the FexGeTe2 family, with Fe3GeTe2 representing the intrinsic limit and Fe5GeTe2 a tunable mixed regime.