- Accepted Paper
Heat conduction and energy relaxation in an InAs nanowire approaching the clean one-dimensional limit
Phys. Rev. B - Accepted 19 October, 2026
DOI: https://doi.org/10.1103/g2cs-pdcw
Phys. Rev. B - Accepted 19 October, 2026
DOI: https://doi.org/10.1103/g2cs-pdcw
We investigate heat conduction and energy relaxation in an InAs semiconductor nanowire using a hybrid semiconductor–superconductor architecture. Local electronic temperatures are measured with an in-situ grown quantum dot thermometer, while controlled Joule heating is applied at different locations along the wire to probe the heat flow along the nanowire at sub-kelvin temperatures. With a one-dimensional heat transport model, we calculate an electron-phonon heat flow that scales as Q_{e-ph} T^2.6, which is in close agreement with the T^3 dependence predicted for a clean one-dimensional phonons coupled to the electron gas. We further estimate a characteristic length l_{eq} = 370 nm, beyond this length scale, phonon-mediated heat transport dominates over heat conduction in our nanowire. Our results provide a quantitative measure of energy relaxation mechanisms in a one-dimensional semiconductor and provide a framework for studying heat flow in low-dimensional nanostructures.
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