Controllable multilevel resistance states are of interest for memory technologies like neuromorphic computing, but robust materials platforms toward such behavior remain limited. Here, we show that the non-centrosymmetric antiferromagnetic metal CeCoGe3 offers one such route through a kinetically arrested first-order magnetic transition. Cooling through the kinetically arrested firstorder transition in an applied magnetic field produces a magnetic glass state in which high- and low-temperature magnetic phases coexist. The relative fraction of these phases can be controlled by the applied field in which the sample is cooled, and the electrical resistance is directly sensitive to that fraction. As a result, CeCoGe3 supports stable multilevel resistive states. These results identify kinetically arrested first-order phase transitions as a promising route towards controllable multilevel magnetoresistive states.