• Accepted Paper

Nonlinear Hall effect in Floquet-driven monolayer 1T′-MoS2

Muhammad Faisal, Muzamil Shah, Imtiaz Khan, and Reza Asgari

Phys. Rev. B - Accepted 21 October, 2026

DOI: https://doi.org/10.1103/bwsj-lnm3

Abstract

The Berry-curvature dipole controls the nonlinear Hall response in time-reversal-symmetric materials with broken inversion symmetry, but its behavior across Floquet-induced topological transitions remains largely unexplored. In this paper, we show that the nonlinear Hall effect in Floquet-driven monolayer 1T′-MoS2 provides a distinct transport signature of light-induced topological transitions. Starting from the Floquet-engineered band structure, we find that the anisotropic Dirac bands impose a directional selection rule, Dx=0 while Dy is symmetry allowed and finite in the metallic regime, producing an intrinsic Berry-curvature dipole without requiring strain or trigonal warping. Our central finding is that the Berry-curvature dipole, and hence the nonlinear Hall response, reverses sign across the successive Floquet-induced topological transitions, with the zero crossings of Dy coinciding, within numerical resolution, with the closing and reopening of the minimum quasienergy gap. In contrast, varying the band parameter ν+ substantially modifies the magnitude of Dy while its sign remains unchanged over the parameter range considered, distinguishing the transition-associated sign reversal from a smooth deformation of the band structure. We further derive the Berry-curvature structure underlying the dipole and demonstrate that the nonlinear Hall response can be controlled by the drive strength, perpendicular electric field, Fermi energy, and temperature. These results identify the sign reversal of the nonlinear Hall response as a bulk nonlinear-transport signature associated with the Floquet-induced topological transitions and establish monolayer 1T′-MoS2 as a promising platform for their transport detection.

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