Color defect centers carrying electron spins in solid crystals like diamond and silicon carbide (SiC) are promising candidates for qubits and quantum sensors, with SiC material being particularly interesting due to its compatibility with the existing semiconductor technology. Here we investigated the electron spin properties of silicon vacancy centers (V1 and V2) both electron spin $S=3/2$ in 4H-SiC in the temperature range $T=80-300$~K using electron paramagnetic resonance (EPR). The EPR spectrum shows central and satellite lines, where the former ones originate from V1 and V2 centers, as well as from unknown defect center X. The analysis of continuous wave EPR measurements revealed a spin concentration of $c_{V1}=1.47\pm 0.3\times {10}^{14}$, $c_{V2}=5.6\pm 1.12\times {10}^{13}$ and $c_X=1.03\pm 0.21\times {10}^{13}$ spins/cm${}^3$. Additionally, electron spin coherence $T_2$ and relaxation times $T_1$ have been measured on the central and on the satellite spectral lines, resulting in longer $T_1$ and $T_2$ for the satellite transition, compared to the central one, with maximum values of $42.8\pm 1.3$~ms and $0.708\pm 0.004$~ms respectively at $T=80$~K. We reveal, that decoherence is mainly caused by nuclear and electron spin diffusion.