Layered transition-metal dichalcogenides can host multiple crystal structures that are closely spaced in free energy, giving rise to rich electronic diversity under modest external perturbations. Molybdenum ditelluride (MoTe2) is a paradigmatic example, in which semiconducting and semimetallic polymorphs closely compete energetically. Here we investigate how hydrostatic compression reshapes electronic transport in bulk 2H-MoTe2. At ambient pressure, resistivity and magnetotransport measurements establish a robust insulating ground state governed by strong localization. Upon compression to pressure up to 15.6 GPa, transport evolves continuously from the 2H semiconducting regime into an electronic response characterized by large, nonsaturating magnetoresistance and low-temperature quantum-interference effects reminiscent of those reported in semimetallic 1T′/Td MoTe2. First-principles calculations including spin-orbit coupling reveal a progressive pressure-driven reconstruction of the electronic structure, whereby the indirect bandgap narrows and collapses into a semimetallic electronic manifold. Together, these results identify a pressure-tuned localization-to-coherence crossover as the organizing principle of transport in bulk 2H-MoTe2, linking disorder-controlled hopping at ambient pressure to quantum-coherent semimetallic-like transport at high pressure. These results demonstrate how lattice compression enables controlled access to competing electronic regimes in layered tellurides and highlight external tuning as a route toward spin-orbit-coupled semimetallic transport states.