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    Experimental simulation of negative entanglement entropy scaling with electrical circuits

    Deyuan Zou1,*, Tian Chen1,*,†, Ching Hua Lee2, and Xiangdong Zhang1,‡

    • 1Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements of Ministry of Education, Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
    • 2Department of Physics, National University of Singapore, Singapore 117542

    • *These authors contributed equally to this work.
    • †Contact author: chentian@bit.edu.cn
    • ‡Contact author: zhangxd@bit.edu.cn

    Phys. Rev. B 111, 214119 – Published 26 June, 2025

    DOI: https://doi.org/10.1103/ztj3-jyzd

    Abstract

    The entanglement entropy (EE) represents an operationally defined entanglement measure which has been widely applied in Hermitian systems such as black holes and quantum many-body systems. Recently, interest has also shifted to the entanglement properties of non-Hermitian systems. It has been theoretically predicted that negative EE scaling can enigmatically arise in non-Hermitian free-fermion lattices hosting exceptional points. However, experimental simulation of such a theoretical prediction remains a challenge. Here, we report an experimental simulation of negative EE scaling using an electrical circuit platform, where the requisite nonreciprocal long-range couplings can be engineered precisely. By measuring resonant voltage profiles, the corresponding simulated negative EE scaling can be demonstrated. Our work paves the way for simulating analogs of probability for nonconserving negative entanglement processes in classical systems.

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