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Effect of modest hydrostatic pressure on low-temperature transport behavior in La3Ni2O7 thin films

Deepak Kumar1, Jared Z. Dans1, Keenan E. Avers1, Ryan Paxson1,2, Ichiro Takeuchi1,2, and Johnpierre Paglione1,3,*

  • *Contact author: paglione@umd.edu

Phys. Rev. B 114, 055128 – Published 24 July, 2026

DOI: https://doi.org/10.1103/zjnc-vv8p

Abstract

The discovery of superconductivity in bilayer nickel oxides has revived an intense effort to understand the potential of high-temperature superconductivity in these materials and their relation to cuprate superconductors. In this work, we investigate the growth and properties of bilayer La3Ni2O7 thin films as a function of substrate, oxygen treatment, and applied pressure in order to study the evolution of transport properties. We report epitaxial growth of La3Ni2O7 thin films on LaAlO3 (LAO) (001) and SrLaAlO4 (SLAO) (001) substrates, and the effects of ex situ annealing in a high-pressure furnace under an oxygen-rich environment (15 bar). Transport measurements show that the La3Ni2O7 thin films on LAO(001) exhibit Fermi-liquid-like metallic behavior with a slight Kondo-like upturn at low temperatures, which evolves with the application of modest hydrostatic pressures toward non-Fermi-liquid behavior with a temperature dependence of resistance approaching ∼T1.4 at 1.41 GPa. The ability to tune the normal state resistivity of La3Ni2O7 films to display non-Fermi-liquid behavior under such a modest hydrostatic pressure range—only 6–8 % of that typically applied via diamond anvil cell in La3Ni2O7 single crystals to achieve comparable effects—is both noteworthy and unexpected. These findings imply the strong tunability of La3Ni2O7 thin film under epitaxial strain and hydrostatic pressure leading to exotic transport behavior at low temperatures.

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