Interplay of flat-band and Anderson localization in disordered moiré superlattices
Phys. Rev. B 114, 144202 – Published 9 September, 2026
DOI: https://doi.org/10.1103/zdy6-y6bt
Abstract
Disorder in moiré superlattices simultaneously degrades flat-band localization and induces Anderson localization, yet how these two regimes interact has remained unclear. Here, we introduce a combined framework linking localization‐length scaling with differential probability density analysis to map localization transitions in partially disordered one‐dimensional silicon moiré lattices. It is found that flat bands confined within the interband gap keep their strong localization even as disorder grows. In contrast, flat bands intersecting dispersive bands exhibit rich behaviors: the low‐frequency branch undergoes an inverse Anderson transition, while the high‐frequency branch supports coexisting flat-band and Anderson localization at strong disorder. Our results deliver direct evidence of competing localization mechanisms in disordered moiré systems and offer guiding principles for engineering robust, nonideal moiré photonic devices.
