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    Magnetically tuned metal-insulator transition in LaAlO3/SrTiO3 nanowire arrays

    Ranjani Ramachandran1,2,*, Shashank Anand3,4,*, Kitae Eom5, Kyoungjun Lee5, Dengyu Yang1,2, Muqing Yu1,2, Sayanwita Biswas1,2, Aditi Nethwewala1,2, Chang-Beom Eom5 et al.

    Patrick Irvin1,2, Erica Carlson3,4, and Jeremy Levy1,2,†

    • *These authors contributed equally to this work.
    • †Contact author: jlevy@pitt.edu

    Phys. Rev. B 112, 125415 – Published 11 September, 2025

    DOI: https://doi.org/10.1103/zb5t-lm73

    Abstract

    A wide family of two-dimensional (2D) systems, including stripe-phase superconductors, sliding Luttinger liquids, and anisotropic 2D materials, can be modeled by an array of coupled one-dimensional (1D) electron channels or nanowire arrays. Here we report experiments in arrays of conducting nanowires with gate and field tunable interwire coupling, that are programmed at the LaAlO3/SrTiO3 interface. We find a magnetically tuned metal-to-insulator transition in which the transverse resistance of the nanowire array increases by up to four orders of magnitude, which can be further tuned with a gate voltage. To explain this behavior, we develop a minimal model of a coupled two-wire system where a Wenzel-Kramers-Brillouin–based approach is used to estimate the transverse tunneling conductance. We demonstrate the existence of distinct conductance features and highlight the crucial role played by the field dependence of the interwire potential barrier on transport properties. Since our model makes minimal assumptions, we expect our predictions to hold for a wide class of coupled 1D systems. The nanowire arrays can serve as model systems to understand the origin of exotic behavior in correlated materials via analog quantum simulation.

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