Two-dimensional compensated antiferromagnets (AFMs) offer unique advantages for spintronics, yet their vanishing net magnetization makes direct electrical readout challenging. Here, we demonstrate that the anomalous Hall effect (AHE) can be realized in AFM MnS through two mechanisms: application of a vertical electric field or interlayer sliding ferroelectricity, both of which break spatial inversion symmetry $\mathcal{P}$ and the combined space-time inversion symmetry $\mathcal{PT}$. In monolayer and AA-stacked bilayer MnS, a sizable anomalous Hall conductivity (AHC) emerges under an applied electric field, with its sign reversing upon reversal of either the Néel vector or the field direction. In sliding-modified ${\mathrm{AB}}^{\prime }$-stacked bilayer MnS, broken symmetries give rise to robust out-of-plane polarization and spontaneous AHE, where polarization reversal induced by sliding simultaneously flips the AHC. These results establish a direct coupling between the AHE, AFM order, and ferroelectric polarization, providing a practical route toward electrical readout and information storage in two-dimensional AFM spintronic devices.

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• Anomalous Hall effect
• 2-dimensional systems
• Ferroelectrics
• Magnetic thin films
• First-principles calculations
• Wannier function methods