Export citation

Export citation

Choose format for download:

Download Citation
  • Editors' Suggestion

Strain gradient engineered flexophotovoltaics and spin polarization in bent MoSi2N4 nanoribbons

Helong Chen1, Meng Ge1, Yang Xiao1, Degao Xu3, Jianing Tan1, and Gang Ouyang1,2,*

  • 1Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China
  • 2State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-sen University), Guangzhou 510275, China
  • 3School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, China

  • *Contact author: gangouy@hunnu.edu.cn

Phys. Rev. B 112, 245407 – Published 5 December, 2025

DOI: https://doi.org/10.1103/z4m4-z59l

Abstract

The flexophotovoltaic effect (FPVE) in two-dimensional (2D) materials offers a promising route for optoelectronic energy conversion, yet the interplay between flexoelectric polarization and electronic/optical properties remains elusive. Here, we reveal that strain-gradient engineering in bent MoSi2N4 nanoribbons with varying widths not only induces self-doping and a nonzero Berry curvature dipole that drives shift current, but also enables an outstanding flexoelectric power conversion efficiency (PCE) of 9.05%, leading among 2D FPVE systems. Moreover, we demonstrate a self-powered FPVE photodetector that generates spin-polarized photocurrent, including pure spin current, without external bias. These findings establish strain-tailored MoSi2N4 as a unified platform for high-efficient photovoltaics, optoelectronics, and spintronics, driven solely by mechanical bending.

Physics Subject Headings (PhySH)

Authorization Required

We need you to provide your credentials before accessing this content.

Supplemental Material (Subscription Required)

References (Subscription Required)

Outline

Information

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation