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Bound states at semiconductor–Mott insulator interfaces

Jan Verlage and Peter Kratzer

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Phys. Rev. B 113, 045110 – Published 6 January, 2026

DOI: https://doi.org/10.1103/ywd2-bh2w

Abstract

Utilizing the hierarchy of correlations in the context of a Fermi-Hubbard model, we deduce the presence of quasiparticle bound states at the interface between a Mott insulator and a semiconductor, as well as within a semiconductor–Mott–semiconductor heterostructure forming a quantum well. In the case of the solitary interface, the existence of bound states necessitates the presence of an additional perturbation with a minimal strength depending on the spin background of the Mott insulator. Conversely, within the quantum well, this additional perturbation is still required to have bound states while standing-wave solutions even exist in its absence.

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Phys. Rev. B 113, 045110– Published 6 January, 2026
  • Received 10 June 2025
  • Revised 13 November 2025
  • Accepted 17 December 2025
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