Using spin- and angle-resolved photoemission spectroscopy combined with density functional theory calculations, we investigate the electronic structure of $\alpha$-GeTe grown on a Si(111)-Sb substrate in the ultrathin limit. The full band structure, including the Fermi surface, and spin texture characterizations are presented, with a focus on a film thickness of 5 nm. Well-defined spin-polarized quantum well bulk states are evidenced. This confirms the high quality of elaborated ultrathin films and allows precise determination of the thickness. The Rashba splitting and the in-plane spin texture of GeTe bulk bands are shown to be fully preserved on the Si(111)-Sb substrate. This suggests the persistence of inversion symmetry breaking and ferroelectric properties in the ultrathin limit of GeTe films. Our results demonstrate that device downscaling can be pursued in the context of all-electrically controlled spin-orbitronics applications.

Close

PrevNext

View figure in article

• Electronic structure
• Spin polarization
• Spin-orbit coupling
• Angle-resolved photoemission spectroscopy
• Density functional theory
• GGA
• Spin-resolved photoemission spectroscopy