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    Second-order Raman scattering of isotope-engineered hexagonal boron nitride: A probe into zone-edge phonons

    Ramon Cuscó

    Thomas Poirier and James H. Edgar

    • GEO3BCN-CSIC, Consejo Superior de Investigaciones Científicas, Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain

    Phys. Rev. B 113, 125205 – Published 25 March, 2026

    DOI: https://doi.org/10.1103/yq1x-tt5p

    Abstract

    We have measured second-order Raman scattering in high-quality monoisotopic h-BN crystals for all possible boron and nitrogen isotope combinations. The second-order spectra are dominated by phonon combinations and are well aligned with density-functional perturbation-theory calculations of the two-phonon density of states. The isotopic shifts are well described by second-order perturbation of the dynamical matrix. The analysis of the Raman spectra of the monoisotopic samples and their isotopic shifts allows us to unambiguously assign the second-order peaks and to determine phonon frequencies at M and K zone-edge points, as well as on the T line. This study demonstrates the usefulness of Raman spectroscopy as a tool for probing the frequencies of zone-edge phonons. These play a prominent role in the phonon-assisted emission in h-BN. The study also serves as a stringent test of the density-functional theory calculations commonly used to estimate these frequencies.

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