We evaluate the real-space second Chern number of four-dimensional Chern insulators using the kernel polynomial method. Our calculations are performed on a four-dimensional system with ${30}^4$ sites, and the numerical results agree well with theoretical expectations. Moreover, we show that the method is capable of capturing the disorder effects. This is evidenced by the phase diagram obtained for disordered systems, which agrees well with predictions from the self-consistent Born approximation. Furthermore, we extend the method to six dimensions and perform an exploratory real-space calculation of the third Chern number. Although finite-size effects prevent full quantization, the numerical results show qualitative agreement with theoretical expectations. The study represents a step forward in the real-space characterization of higher-dimensional topological phases.

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• Berry curvature
• Chern insulators
• Disordered systems