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Ultrafast electronic structure engineering in 1T−TaS2: Role of doping and amplitude mode dynamics

J. Jayabalan1, Jiyu Chen2, Laura Pätzold3, Francesco Petocchi2,4, Florian K. Diekmann5, Negar Najafianpour1, Ping Zhou1, Walter Schnelle6, Gesa-R. Siemann7 et al.

Philip Hofmann7, Kai Rossnagel5,8, Tim Wehling3,9, Martin Eckstein3, Philipp Werner2, and Uwe Bovensiepen1,*

  • *Contact author: uwe.bovensiepen@uni-due.de
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Phys. Rev. B 113, 245107 – Published 1 June, 2026

DOI: https://doi.org/10.1103/yc4p-y1xg

Abstract

In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Transient changes in pristine and Mo-doped 1T−TaS2 are measured by femtosecond time-resolved photoelectron spectroscopy and modeled using nonequilibrium dynamical mean-field theory complemented by density functional theory. Inspired by vibrational spectroscopy we analyze real-time oscillatory spectral changes induced by the charge density wave amplitude mode through modulations of electronic interactions. We distinguish effects induced by electron doping and structural disorder which can modify the layer stacking and conclude that doped crystals might feature an enhanced fraction of monolayers. Our work establishes substitutional doping as a pathway to engineer the dynamic electronic structure in correlated transition metal dichalcogenides.

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Phys. Rev. B 113, 245107– Published 1 June, 2026
  • Received 13 June 2025
  • Revised 12 December 2025
  • Accepted 8 May 2026
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Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

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