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    Optical control of charge carrier behavior and electron-phonon strong coupling in Co40Fe40B20/Ti heterostructures

    Qiujin Wang1, Tingting Yuan1, Yifei Wang2, Yujun Zhang1,*, Lei Hou1, Yiming Xiao1, Wen Xu1,3,4, Chenxia Guo2, Yalu Zuo2 et al.

    Li Xi2,† and Lan Ding1,‡

    • 1School of Physics and Astronomy and Yunnan Key Laboratory of Quantum Information, Yunnan University, Kunming 650091, China
    • 2School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
    • 3Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
    • 4Micro Optical Instruments Inc., Shenzhen 518118, China

    • *Contact author: zhangyujun@ynu.edu.cn
    • †Contact author: xili@lzu.edu.cn
    • ‡Contact author: dinglan@ynu.edu.cn

    Phys. Rev. B 113, 035419 – Published 14 January, 2026

    DOI: https://doi.org/10.1103/xykr-mqm5

    Abstract

    The combination of ferromagnetic metals and nonmagnetic light metals, exemplified by the Co80−xFexB20/Ti bilayer heterostructures, has emerged as an outstanding platform for achieving terahertz (THz) emission based on both spin-to-charge and orbital-to-charge current conversion. Although some of many-body phenomena based on the interactions among charge, spin, orbital, and lattice degrees of freedom in such heterostructures have been investigated by using THz emission spectroscopy recently, other many-body effects affecting the THz absorption properties of these bilayer systems still remain relatively unexplored. Here we characterize the THz transmission/absorption properties of Co40Fe40B20 (CFB)/Ti heterostructures and investigate the many-body interactions associated with photons, charge carriers, and phonons in them. It is demonstrated that the heterostructures exhibit metallic-type charge carrier behavior in the range of 0.1–1.2 THz, whereas a significant Fano asymmetric line shape is observed in the regime of 1.2–2 THz. The Fano resonance can be attributed to the strong coupling between free electrons and interface phonons. More importantly, we show that this coupling can be modulated by pumping/exciting the heterostructures with a continuous-wave laser. Specifically, the CFB(15 nm)/Ti sample exhibits a large modulation depth of approximately 82.5% at 1.65 THz under a power density of 191mW/cm2. Furthermore, by fitting the experimental data with the Drude-Fano model, we also obtain the characteristic parameters of the charge carriers and electron-phonon coupling, as well as their dependencies upon the pump power density and CFB thickness. These findings not only offer a deeper understanding of the many-body THz response in CFB/Ti systems and their active control but also advance the research on CFB-based THz devices.

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