Sliding is a ubiquitous phenomenon in moiré systems, but its direct influence on moiré bands, especially in multitwist moiré systems, has been largely overlooked to date. Here, we theoretically show that sliding provides a unique pathway to engineer the quantum geometry (Berry curvature and quantum metric) of moiré bands, exhibiting distinct advantages over conventional strategies. Specifically, we first suggest alternating twisted trilayer ${\mathrm{MoTe}}_2$ (AT3L-${\mathrm{MoTe}}_2$) and chirally twisted triple bilayer graphene (CT3BLG) as two ideal paradigmatic systems for probing sliding-engineered quantum geometric phenomena. Then, two sliding-induced exotic quantum geometry phenomena are predicted: (1) an intrinsic nonlinear Hall effect via sliding-produced nonzero Berry curvature dipole, with CT3BLG as an ideal platform, and (2) significant quantum metric modulation in AT3L-${\mathrm{MoTe}}_2$, enabling tests of quantum geometric criteria for the fractional Chern insulating state. Our work establishes sliding as a degree of freedom for manipulating quantum geometry of moiré bands, which emerges as a signature phenomenon of multitwist moiré systems.

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• Electrical properties
• Flat bands
• Geometric & topological phases
• Hall effect
• Transport phenomena
• Twistronics
• Graphene
• Transition metal dichalcogenides