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    Engineering topological exciton structures in two-dimensional semiconductors by a periodic electrostatic potential

    Na Zhang1, Wang Yao2,3, and Hongyi Yu1,4,*

    • 1Guangdong Provincial Key Laboratory of Quantum Metrology and Sensing and School of Physics and Astronomy, Sun Yat-Sen University (Zhuhai Campus), Zhuhai 519082, China
    • 2New Cornerstone Science Laboratory, Department of Physics, University of Hong Kong, Hong Kong, China
    • 3HK Institute of Quantum Science and Technology, University of Hong Kong, Hong Kong, China
    • 4State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University (Guangzhou Campus), Guangzhou 510275, China

    • *Contact author: yuhy33@mail.sysu.edu.cn

    Phys. Rev. B 112, 165406 – Published 7 October, 2025

    DOI: https://doi.org/10.1103/xhgh-mpky

    Abstract

    We show the ability of hybridizing different Rydberg states by a periodic electrostatic potential provides a conceptual scheme for engineering topological exciton structures in layered transition metal dichalcogenides. Such a potential can be remotely imprinted from charge distributions in substrate layers, whose large tunability gives rise to rich topological phase diagrams for the exciton. We find the topological lowest band of the dipolar interlayer exciton can exhibit a small bandwidth, as well as remarkable quantum geometries well suited for realizing the long-sought bosonic fractional Chern insulator. For monolayer excitons, topological bands and in-gap helical edge states can emerge near the energy of 2p states.

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