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High-resolution polar Kerr effect studies of CsV3Sb5 and ScV6Sn6 below the charge order transition

David R. Saykin1,2,3, Qianni Jiang2,4, Zhaoyu Liu5, Chandra Shekhar6, Claudia Felser6, Jiun-Haw Chu5, and Aharon Kapitulnik1,2,3,4,*

  • *Contact author: aharonk@stanford.edu

Phys. Rev. B 113, L241104 – Published 1 June, 2026

DOI: https://doi.org/10.1103/xfv5-3z9t

Abstract

We report high-resolution polar Kerr effect measurements on CsV3Sb5 and ScV6Sn6single crystals in search of signatures of the spontaneous polar Kerr effect (PKE) below the charge order transitions of these materials. Utilizing two separate zero-area loop Sagnac interferometers operating at 1550- and 830-nm wavelengths, we studied the temperature dependence of a possible PKE after training with the magnetic field. While a finite-field Kerr measurement yielded optical rotation expected from the Pauli susceptibility of the itinerant carriers, no signal was detected at zero field to within the noise floor limit of the apparatus of below ∼100 nanorad. Simultaneous coherent reflection measurements confirm the sharpness of the charge order transition in the same optical volume as the Kerr measurements. The application of strain to reveal a hidden flux-ordered magnetic state did not result in a finite Kerr effect.

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