Iron chalcogenides exhibit rich phenomena which are governed by orbital-dependent electronic interactions and strong electronic correlation. In particular, many studies have explored orbital selectivity in FeTe through Se doping. Here, applying tensile strain to thin films allows us to precisely control the system without other impurities that may arise from chemical doping to investigate the emergent behaviors in FeTe. Using angle-resolved photoemission spectroscopy, we observe a spectral weight transfer between $d_{\mathrm{xy}}$ and $d_{{\mathrm{z}}^2}$ orbitals, evidence of an orbital-selective Mott phase (OSMP). Beyond OSMP, we reveal an unobserved strain-induced effects, distinct from chemical doping. The evolution of $d_{\mathrm{xz}}$ orbital demonstrates how electron hopping mechanism plays an important role in defining the electronic properties of the system. Our findings highlight a direct correlation between epitaxial strain and the evolution of electronic structures in FeTe.

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• Electronic structure
• Strongly correlated systems
• Angle-resolved photoemission spectroscopy