symmetry induced antisymmetric planar Hall effect and magnetoresistance in single-crystalline ferromagnets
Phys. Rev. B 114, 094420 – Published 17 August, 2026
DOI: https://doi.org/10.1103/xbkm-nyrf
Abstract
The planar Hall effect (PHE) is typically symmetric under magnetic field reversal, as required by the Onsager reciprocity relations. Recent advances have identified the antisymmetric PHE as an intriguing extension in magnetic systems. While new mechanisms have been proposed, the role of conventional anisotropic magnetoresistance (AMR) in this phenomenon remains unclear. Here, we report the experimental discovery of an antisymmetric PHE and magnetoresistance, with respect to both magnetic field and magnetization, in single-crystal (111) thin films with rotational symmetry and perpendicular magnetic anisotropy (PMA). We demonstrate that both antisymmetric effects arise naturally from the intrinsic fourth-rank AMR tensor inherent to -symmetric planes, assisted by PMA. Our findings link conventional AMR to antisymmetric galvanomagnetic responses, offering insights into symmetry-governed transport in crystalline ferromagnets.