Room-temperature spin-optical active quantum emitters in hexagonal boron nitride (hBN) are promising candidates for advancing quantum photonic technologies; however, their inherently low photoluminescence (PL) quantum yield presents a significant challenge for optical readout. Here, we report a single-step coformation strategy that simultaneously creates plasmonic microcavities and quantum emitters in hBN via thermal annealing of $\mathrm{hBN}/\mathrm{Au}/{\text{SiO}}_2/\mathrm{Si}$ substrates. This process produces an ultraclean, spacer-free cavity-emitter system with large-area integration capability. The resulting cavity-coupled emitters exhibit a $247\%$ increase in the overall PL intensity and a Purcell factor of $4.27\pm 0.27$, attributed to strong cavity-emitter coupling. The cavity-coupled system exhibited a reduced radiative lifetime of $0.33\pm 0.01\mathrm{ns}$ (radiative rate of $\sim 3.03\mathrm{GHz}$) compared to a cavity-free emitter of $1.41\pm 0.08\mathrm{ns}$ (radiative rate of $\sim 0.70\mathrm{GHz}$). Single-photon emission purity of $56\%$ was confirmed for emitters at 1.97 eV, while systematic analysis of emission dynamics revealed multilevel quantum system behaviors, which can be explained by using a scattering-Lindbladian-Hamiltonian (SLH) framework. These results demonstrate the control over emission properties through cavity design and emitter-cavity coupling, establishing a robust route toward integrated, room-temperature quantum photonic circuitry.

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• Coherent control
• Photoluminescence
• Photon counting
• Raman spectroscopy