Oxygen vacancy driven metallic behavior and Kondo scattering in the incipient ferroelectric
Phys. Rev. B 113, 205136 – Published 20 May, 2026
DOI: https://doi.org/10.1103/x369-n5fj
Abstract
While electron doping in incipient ferroelectrics like and , via chemical substitution or heterostructure engineering, has revealed a wealth of collective quantum phenomena, its effect in remains largely unexplored. In this work, we investigate the change in electronic properties of single crystal via the introduction of oxygen vacancy. Our magnetotransport measurements reveal clear signatures of Kondo scattering, arising from the interaction between conduction electrons and localized magnetic moments. Employing hard x-ray photoemission spectroscopy combined with DFT calculations, we unravel the underlying electronic structure and demonstrate the dichotomic nature of oxygen vacancy induced electron doping: a fraction of vacancy-donated electrons occupy states near the Fermi level, driving metallic behavior, while the remainder localize in deep in-gap states, acting as magnetic moments responsible for Kondo scattering. Owing to the polar nature of ferroelastic domain walls in pristine [Phys. Rev. Lett. 101, 097602 (2008)], electron-doped offers a compelling platform to investigate the intricate interplay between localized magnetic moments and electric dipoles embedded within a Fermi sea. Furthermore, controlled manipulation of domain wall polarity may unlock novel functionalities, offering promising avenues for next-generation electronic devices.