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Negative exchange interaction in Si quantum dot arrays via valley-phase induced gauge field
Phys. Rev. B 112, 125420 – Published 18 September, 2025
DOI: https://doi.org/10.1103/x2jk-714n
Abstract
The exchange interaction offers a powerful tool for quantum computation based on semiconductor spin qubits. However, the exchange interaction in two-electron systems in the absence of a magnetic field is usually constrained to be non-negative , which inhibits the construction of various dynamically corrected exchange-based gates. In this work, we show that negative exchange can be realized in two-electron Si quantum dot arrays in the absence of a magnetic field due to the presence of the valley degree of freedom. Here, valley phase differences between dots produce a nontrivial gauge field in the low-energy effective theory, which in turn can lead to a negative exchange interaction. In addition, we show that this gauge field can break Nagaoka ferromagnetism and be engineered by altering the occupancy of the dot array. Therefore, our work uncovers alternative tools for exchange-based quantum computing and a unique setting for studying quantum magnetism.