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    Twisting in h-BN bilayers and their angle-dependent properties

    Diem Thi-Xuan Dang*, Dai-Nam Le†, and Lilia M. Woods‡

    • *Contact author: dangt1@usf.edu
    • †Contact author: dainamle@usf.edu
    • ‡Contact author: lmwoods@usf.edu

    Phys. Rev. B 112, 085102 – Published 4 August, 2025

    DOI: https://doi.org/10.1103/wzz2-pszx

    Abstract

    We systematically investigate the structural and electronic properties of twisted h-BN bilayers to understand the role of the twisting angle. Using first-principles methods with relaxation taken into account, we simulate h-BN bilayers with commensurate supercells with the smallest angle being 2.88∘ until 60∘. We find that the interlayer separation is not constant throughout each bilayer because of the various stacking patterns throughout the layers, which also plays a significant role in their interlayer charge redistribution. The calculations for the 110 generated structures show the existence of flat bands in several twisted h-BN bilayers, as well as the emergence of different trends in their properties as a function of the twist angle. These results are useful for establishing a systematic base line of registry-dependent relations for the development of more advanced computational methods to access incommensurate h-BN bilayers.

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