Electric field and nonvolatile ferroelectric driven fully compensated ferrimagnetism in a monolayer MXene
Phys. Rev. B 113, 245417 – Published 12 June, 2026
DOI: https://doi.org/10.1103/wws5-xmr3
Abstract
Fully compensated ferrimagnets possess the advantages of both collinear compensated net magnetic moments and nonrelativistic spin splitting in which the nonvolatile control is a prerequisite for realizing the spintronic nanodevices. The A-type antiferromagnetic MXene is a potential candidate for the fully compensated ferrimagnet with intralayer ferromagnetic and interlayer antiferromagnetic ordering. Based on first-principles calculations and Monte Carlo simulations, we demonstrate that the two-dimensional monolayer MXene is an antiferromagnetic semiconductor with a Néel temperature close to room temperature (260.2 K). By breaking symmetries between sublattices through applying an electric field or constructing ferroelectric heterostructure, we successfully tune the system into a fully compensated ferrimagnetic state, which can be detected via the magnetooptical Kerr effect. Notably, the electric-field and the nonvolatile ferroelectric control enable the promising applications of magnetic MXene in low-dimensional spintronic devices.