The electronic structure of ${\mathrm{VSe}}_2$ with $4\times 4\times 3.18$ charge density wave (CDW) transition has been studied by means of angle-resolved photoemission spectroscopy (ARPES) and scanning photoemission microscopy (SPEM). The partial depletion of the Fermi surfaces is observed in the CDW phase by ARPES, consistent with that reported previously. A flat band with V $3d3z^2\text{−}{r}^2$ character, which is observed near the Fermi level around the $\mathrm{\Gamma }$ point in the Brillouin zone, gains its spectral weight in the CDW phase while the holelike band around the $A$ point loses its weight. The spectral weight redistribution across the CDW transition indicates an important role of the V $3d$-Se $4p$ hybridization, associated with the out-of-plane displacement of Se reported by Petkov et al. [Phys. Rev. B 111, 014105 (2025)]. The electronic inhomogeneity observed by SPEM suggests different surface terminations of the CDW state with the strong lattice and electronic modulation along the out-of-plane direction.

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• Charge density waves
• Flat bands
• Transition metal dichalcogenides
• Angle-resolved photoemission spectroscopy