Amplification of valley polarization in an hBN-separated heterostructure
Phys. Rev. B 114, 105307 – Published 24 August, 2026
DOI: https://doi.org/10.1103/wktk-zl2r
Abstract
Transition metal dichalcogenide heterostructures host long-lived interlayer excitons in the and valleys that can encode long-lived valley polarization. We investigated the low-temperature valley polarization dynamics in an -bilayer hBN- heterostructure. The bilayer hBN spacer results in an interlayer exciton lifetime exceeding 2 µs and an anomalous valley polarization amplification effect. Our theoretical model shows that this amplification results from the long exciton lifetime and exciton-exciton interactions. This work sets the stage for long-lived interlayer excitons to be used in nonlinear valleytronic transistors and amplifiers.