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    Amplification of valley polarization in an hBN-separated MoSe2−WSe2 heterostructure

    Fateme Mahdikhany1,2,*, Jacob Cutshall1,*, Daniel Shanks1, Garett Reichenbach1, Davoud Adinehloo3, Michael R. Koehler4, David G. Mandrus5,6,7, Takashi Taniguchi8, Kenji Watanabe9 et al.

    Vasili Perebeinos3, Brian J. LeRoy1, and John R. Schaibley1,†

    • *These authors contributed equally to this work.
    • †Contact author: johnschaibley@arizona.edu

    Phys. Rev. B 114, 105307 – Published 24 August, 2026

    DOI: https://doi.org/10.1103/wktk-zl2r

    Abstract

    Transition metal dichalcogenide heterostructures host long-lived interlayer excitons in the +K and −K valleys that can encode long-lived valley polarization. We investigated the low-temperature valley polarization dynamics in an MoSe2-bilayer hBN-WSe2 heterostructure. The bilayer hBN spacer results in an interlayer exciton lifetime exceeding 2 µs and an anomalous valley polarization amplification effect. Our theoretical model shows that this amplification results from the long exciton lifetime and exciton-exciton interactions. This work sets the stage for long-lived interlayer excitons to be used in nonlinear valleytronic transistors and amplifiers.

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